06 October 2023
Science Building
America/Chicago timezone
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Electronic Properties of Two-Dimensional Transition Metal Dichalcogenides and hBN​
Two-dimensional materials like the hexagonal Boron Nitride hBN and the transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique properties that enable advanced optoelectronic device fabrication. They have also been studied as hosts of single photon emitters (quantum light emitters). To understand the electronic properties and lifetime of photoluminescence (PL) in hBN, which is part of the family of 2-dimensional materials, we used photoluminescence (PL) and time-resolved photoluminescence (TR-PL) spectroscopy. Our observations indicate that narrow-width PL emission in the spectral region between 693 and 698 nm occurs at room temperature from states in the bandgap of hBN. These states may originate from lattice-embedded carbon atoms, which can potentially act as quantum light emitters that can be used for quantum technology applications.
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Id: 16
Place: Science Building
Texas Tech University, Physics & Astronomy 

Room: 106
Starting date:
06-Oct-2023   13:00 (America/Chicago)
Duration: 03h00'
Contribution type: Poster
Primary Authors: CHATZAKIS, Ioannis (Texas Tech University)
Mr. CHUGH, Aryan (Texas Tech University)
Presenters: Mr. CHUGH, Aryan
Material: slide Slides