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| Heat Flow across an Oxide Layer in Si |
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| Content: |
We describe the first ab-initio (classical) molecular-dynamics (MD) simulations of heat flow across an amorphous SiO2 layer in Si. The host material is modeled by a Si nanowire which contains a thin oxide layer. The ab-initio calculations are performed using density-functional theory for the electronic states and the newly-developed supercell preparation technique to initiate the MD runs. The time constants required to achieve thermal equilibrium are obtained at two different temperatures with and without the oxide layer. It is shown that oxide layers are substantial barriers to heat flow. |
| Id: |
0 |
| Place: |
Science Building Texas Tech University, Physics & Astronomy Department, Box 41051, Lubbock, TX 79409-1051
Room: 103/106 - board #: G2-1 |
| Starting date: |
| 06-Oct-2017 |
14:00 (America/Chicago) |
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| Duration: |
02h00' |
| Primary Authors: |
STANLEY, Christopher (Physics) |
| Co-Authors: |
Prof. ESTREICHER, Stefan (Physics) |
| Presenters: |
STANLEY, Christopher |
| Material: |
 Slides |
| Included in session: |
Group 2 |
| Included in track: |
Graduate students poster competition |
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